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insulated gate bipolar transistor with ultrafast soft recovery diode 8/30/04 www.irf.com 1 irgb4b60kd1pbf irgs4b60kd1pbf IRGSL4B60KD1PBF e g n-channel c v ces = 600v i c = 7.6a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 2.1v features ? low vce (on) non punch through igbt technology. ? 10s short circuit capability. ? square rbsoa. ? positive vce (on) temperature coefficient. ? maximum junction temperature rated at 175c. benefits ? benchmark efficiency for motor control. ? rugged transient performance. ? low emi. ? excellent current sharing in parallel operation. d 2 pak irgs4b60kd1 to-262 irgsl4b60kd1 to-220 irgb4b60kd1 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 11 i c @ t c = 100c continuous collector current 7.6 a i cm pulse collector current (ref.fig.c.t.5) 22 i lm clamped inductive load current 22 i f @ t c = 25c diode continuous forward current 11 i f @ t c = 100c diode continuous forward current 6.7 i fm diode maximum forward current 22 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 63 w p d @ t c = 100c maximum power dissipation 31 t j operating junction and -55 to +175 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 2.4 c/w r jc junction-to-case- diode ??? ??? 6.1 r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient ??? ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 1.44 ??? g ? lead-free
irgb/s/sl4b60kd1pbf 2 www.irf.com note to are on page 16 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown volta ge ?0.28?v/c v ge = 0v, i c = 1ma (25c-150c) ?2.12.5 i c = 4.0a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter voltage ? 2.5 2.8 v i c = 4.0a, v ge = 15v, t j = 150c 9,10,11 ?2.62.9 i c = 4.0a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a 9,10,11 ? v ge(th) / ? t j threshold voltage temp. coefficient ? -8.1 ? mv/ c v ce = v ge , i c = 1ma (25c-150c) 12 gfe forward transconductance ? 1.7 ? s v ce = 50v, i c = 4.0a, pw = 80s ?1.0150 v ge = 0v, v ce = 600v i ces zero gate voltage collector current ? 136 600 a v ge = 0v, v ce = 600v, t j = 150c ? 722 2400 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.4 2.0 v i f = 4.0a 8 ?1.31.8 i f = 4.0a, t j = 150c ?1.21.7 i f = 4.0a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. q g total gate charge (turn-on) ? 12 ? i c = 4.0a 23 q ge gate-to-emitter charge (turn-on) ? 1.7 ? nc v cc = 400v ct1 q gc gate-to-collector charge (turn-on) ? 6.5 ? v ge = 15v e on turn-on switching loss ? 73 80 i c = 4.0a, v cc = 400v ct4 e off turn-off switching loss ? 47 53 j v ge = 15v, r g = 100 ? , l = 2.5mh e tot total switching loss ? 120 130 t j = 25c t d(on) turn-on delay time ? 22 28 i c = 4.0a, v cc = 400v t r rise time ? 18 23 ns v ge = 15v, r g = 100 ? , l = 2.5mh ct4 t d(off) turn-off delay time ? 100 110 t j = 25c t f fall time ? 66 80 e on turn-on switching loss ? 130 150 i c = 4.0a, v cc = 400v ct4 e off turn-off switching loss ? 83 140 j v ge = 15v, r g = 100 ? , l = 2.5mh 13,15 e tot total switching loss ? 220 280 t j = 150c wf1,wf2 t d(on) turn-on delay time ? 22 27 i c = 4.0a, v cc = 400v 14,16 t r rise time ? 18 22 ns v ge = 15v, r g = 100 ? , l = 2.5mh ct4 t d(off) turn-off delay time ? 120 130 t j = 150c wf1 t f fall time ? 79 89 wf2 c ies input capacitance ? 190 ? v ge = 0v c oes output capacitance ? 25 ? pf v cc = 30v 22 c res reverse transfer capacitance ? 6.2 ? f = 1.0mhz rbsoa reverse bias safe operating area full square t j = 150c, i c = 22a, vp = 600v 4 v cc =500v,v ge = +15v to 0v,r g = 100 ? ct2 scsoa short circuit safe operating area 10 ? ? s t j = 150c, vp = 600v, r g = 100 ? ct3 v cc =360v,v ge = +15v to 0v wf4 e rec reverse recovery energy of the diode ? 81 100 j t j = 150c 17,18,19 t rr diode reverse recovery time ? 93 ? ns v cc = 400v, i f = 4.0a, l = 2.5mh 20,21 i rr peak reverse recovery current ? 6.3 7.9 a v ge = 15v, r g = 100 ? ct4,wf3
irgb/s/sl4b60kd1pbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 70 p t o t ( w ) 0 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10ms dc 1ms 100s 10 100 1000 v ce (v) 0 1 10 100 i c a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 2 4 6 8 10 12 i c ( a )
irgb/s/sl4b60kd1pbf 4 www.irf.com fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s 0 2 4 6 8 10 12 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 12 v ce (v) 0 5 10 15 20 25 30 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 12 v ce (v) 0 5 10 15 20 25 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f (v) 0 5 10 15 20 25 30 35 i f ( a ) -40c 25c 150c
irgb/s/sl4b60kd1pbf www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 12 - typ. transfer characteristics v ce = 360v; tp = 10s fig. 11 - typical v ce vs. v ge t j = 150c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 2.0a i ce = 4.0a i ce = 8.0a 0 5 10 15 20 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 30 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c
irgb/s/sl4b60kd1pbf 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l=2.5mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l=2.5mh; v ce = 400v, r g = 100 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l=2.5mh; v ce = 400v i ce = 4.0a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l=2.5mh; v ce = 400v i ce = 4.0a; v ge = 15v 12345678910 i c (a) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e off e on 0 100 200 300 400 500 r g ( ? ) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e on e off 0 2 4 6 8 10 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 100 200 300 400 500 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
irgb/s/sl4b60kd1pbf www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 4.0a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 4.0a; t j = 150c 0 1 2 3 4 5 6 7 8 9 10 i f (a) 1 2 3 4 5 6 7 8 9 10 i r r ( a ) r g = 100? r g = 200 ? r g = 330 ? r g = 470 ? 0 100 200 300 400 500 r g ( ?) 2 3 4 5 6 7 i r r ( a ) 100 150 200 250 300 di f /dt (a/s) 2 3 4 5 6 7 i r r ( a ) 0 50 100 150 200 250 300 350 400 di f /dt (a/s) 100 200 300 400 500 600 700 q r r ( c ) 100? 200? 470 ? 330? 4.0a 8.0a 2.0a
irgb/s/sl4b60kd1pbf 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 23 - typical gate charge vs. v ge i ce = 4.0a; l = 3150h 0 1 2 3 4 5 6 7 8 9 10 i f (a) 0 25 50 75 100 125 150 e n e r g y ( j ) 200? 100? 330? 470 ? 02468101214 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres
irgb/s/sl4b60kd1pbf www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0429 0.000001 1.3417 0.000178 1.0154 0.000627 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.0904 0.000003 1.6662 0.000117 3.5994 0.001610 0.7454 0.048846
irgb/s/sl4b60kd1pbf 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v
irgb/s/sl4b60kd1pbf www.irf.com 11 fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t c = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -100 0 100 200 300 400 500 600 700 0.4 0.6 0.8 1 1.2 time (us) vce (v) -2 0 2 4 6 8 10 12 14 ice (a) tf eoff loss 90% ice 5% vce 5% ice vce ic e -100 0 100 200 300 400 500 600 700 0.35 0.45 0.55 0.65 time (us) vce (v) -2 0 2 4 6 8 10 12 14 ice (a) eo n loss tr 90% ice 10% ice 5% vce vce ic e -600 -500 -400 -300 -200 -100 0 100 0.05 0.15 0.25 0.35 time (us) vf (v) -8 -6 -4 -2 0 2 4 6 if (a) q rr t rr peak i rr 10% peak i rr -50 0 50 100 150 200 250 300 350 400 30 40 50 60 70 time (us) -5 0 5 10 15 20 25 30 35 40 i (a) vce ice i ce (a) v ce (v)
irgb/s/sl4b60kd1pbf 12 www.irf.com

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number assembly lot code dat e code year 7 = 1997 line c week 19 logo rect ifier int e rnat ional note: "p" in assembly line position indicates "lead-free" lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector
irgb/s/sl4b60kd1pbf www.irf.com 13 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" f 530s t h is is an ir f 530s wit h lot code 8024 as s emb led on ww 02, 2000 in the assembly line "l" as s e mb l y lot code in t e r n at ion al rectifier logo part number date code ye ar 0 = 2000 week 02 line l f 530s a = assembly site code week 02 p = des ignate s lead-free product (optional) rectifier in t e r n at ion al logo lot code as s e mb l y ye ar 0 = 2000 date code part number

dimensions are shown in millimeters (inches)
irgb/s/sl4b60kd1pbf 14 www.irf.com to-262 part marking information to-262 package outline assembly lot code rectifier in t e r nat ional as s e mb le d on ww 19, 1997 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t h is is an irl3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part nu mb e r part number logo lot code assembly in t e r nat ional rectifier product (optional) p = de s ign at e s l e ad -f r e e a = assembly site code week 19 ye ar 7 = 1997 dat e code or
irgb/s/sl4b60kd1pbf www.irf.com 15 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-220ab package is not recommended for surface mount application. notes: v cc = 80% (v ces ), v ge = 15v, l = 100h, r g = 100 ?. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery, using diode fd059h06a5. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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